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STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 , 4 A, PowerMESHTM Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7 4A 63 W <7 3 STP4N150 1500 V 4A 160 W 1 2 3 2 STW4N150 1500 V <7 4A 160 W TO-220 1 TO-247 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching 2 3 1 Fully isolated TO-3PF plastic packages TO-3PF Creepage distance path is 5.4 mm (typ.) for TO-3PF Application Figure 1. Internal schematic diagram. Switching applications Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Order codes Marking Package Packaging STFW4N150 4N150 TO-3PF Tube STP4N150 P4N150 TO-220 Tube STW4N150 W4N150 TO-247 Tube July 2009 Doc ID 11262 Rev 9 1/15 www.st.com 15 Contents STFW4N150, STP4N150, STW4N150 Contents 1